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Universal Flash Storage: UFS 3.0 creates 2.4 GB per second

Monday, September 11th, 2017 | Gadgets

The Jedec storage group has given an outlook on UFS 3.0 (PDF). The standard is to be completed in the first half of 2018. With the third version of Universal Flash Storage, the maximum sequential speed increases from around 1.2 to 2.4 GB per second. Current status is UFS 2.1, which is supported by systems-on-a-chip such as Huawei Kirin 970, Qualcomms Snapdragon 835 or Samsung Exynos 8895. Corresponding flash memory is available in devices like the Mate 9 or the Galaxy S8.

        
                
            
    UFS 3.0 creates 2.4 GB / s. (Image: Jedec)

For UFS 2.1, up to two lanes are operated in HS-G3 mode (High Speed ​​Gear 3). This corresponds to 11.66 GBit per second and thus about 1.46 GB per second – overhead and coding are not yet filed here, the effective transfer rate falls lower. There are Phison's matching controllers: the PS8313 chip does not, however, read out the interface with 920 MB per second and 550 MB per second, and 67K and 62K input / output operations per second. However, Phison has also measured the controller with favorable 3D-TLC memory.

According to a report by Benchlife, Phison is working on chips for Universtal Storage 3.0, which then use four G3 lanes for 23.3 GBit per second. With 8b / 10b coding and protocol overhead, around 2.4 GB per second remain. Phison assumes that UFS 3.0 from 2019 will become the standard in Topsmartphones. For the time being, however, it will remain with UFS 2.1, although some manufacturers are beginning to implement PCIe as an interface.

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